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 May 2002
(R)
AS7C1024A AS7C31024A
5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)
Features
* AS7C1024A (5V version) * AS7C31024A (3.3V version) * Industrial and commercial temperatures * Organization: 131,072 words x 8 bits * High speed - 10/12/15/20 ns address access time - 5, 6, 7, 8 ns output enable access time * Low power consumption: ACTIVE
- 853 mW (AS7C1024A) / max @ 10 ns - 522 mW (AS7C31024A) / max @ 10 ns
* Latest 6T 0.25u CMOS technology * Easy memory expansion with CE1, CE2, OE inputs * TTL/LVTTL-compatible, three-state I/O * 32-pin JEDEC standard packages
300 mil SOJ 400 mil SOJ 8 x 20mm TSOP 1 8 x 13.4mm sTSOP 1
* ESD protection 2000 volts * Latch-up current 200 mA
* Low power consumption: STANDBY
- 55 mW (AS7C1024A) / max CMOS - 36 mW (AS7C31024A) / max CMOS
Pin arrangement
32-pin SOJ (300 mil) 32-pin SOJ (400 mil)
NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3
Logic block diagram
VCC GND Input buffer A0 A1 A2 A3 A4 A5 A6 A7 A8 I/O7 512x256x8 Array (1,048,576) Sense amp
Row decoder
32-pin (8 x 20mm) TSOP I 32-pin (8 x 13.4mm) sTSOP1
A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3
I/O0 Column decoder A9 A10 A11 A12 A13 A14 A15 A16 WE OE CE1 CE2
Control circuit
Selection guide
-10
Maximum address access time Maximum output enable access time AS7C1024A Maximum operating current AS7C31024A AS7C1024A Maximum CMOS standby current AS7C31024A
10 5 155 145 10 5
-12 12 6 150 140 10 5
-15 15 7 145 135 10 5
AS7C1024A AS7C31024A
AS7C1024A AS7C31024A
-20 20 8 140 130 10 5
Unit ns ns mA mA mA mA
9/26/02; 0.9.9
Alliance Semiconductor
P. 1 of 9
Copyright (c) Alliance Semiconductor. All rights reserved.
AS7C1024A AS7C31024A
(R)
Functional description
The AS7C1024A and AS7C31024A are high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5, 6, 7, 8 ns are ideal for high performance applications. Active high and low chip enables (CE1, CE2) permit easy memory expansion with multiple-bank systems. When CE1 is high or CE2 is low the devices enter standby mode. If inputs are still toggling, the device will consume ISB power. If the bus is static, then full standby power is reached (ISB1). For example, the AS7C31024A is guaranteed not to exceed 36mW under nominal full standby conditions. All devices in this family will retain data when VCC is reduced as low as 2.0V. A write cycle is accomplished by asserting write enable (WE) and both chip enables (CE1, CE2). Data on the input pins I/O0-I/O7 is written on the rising edge of WE (write cycle 1) or the active-to-inactive edge of CE1 or CE2 (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting output enable (OE) and both chip enables (CE1, CE2), with write enable (WE) high. The chips drive I/O pins with the data word referenced by the input address. When either chip enable is inactive, output enable is inactive, or write enable is active, output drivers stay in high-impedance mode.
Absolute maximum ratings
Parameter Voltage on VCC relative to GND Voltage on any pin relative to GND Power dissipation Storage temperature (plastic) Ambient temperature with VCC applied DC current into outputs (low) AS7C1024A AS7C31024A Both Both Both Both Both Symbol Vt1 Vt1 Vt2 PD Tstg Tbias IOUT Min -0.50 -0.50 -0.50 - -65 -55 - Max +7.0 +5.0 VCC +0.50 1.0 +150 +125 20 Unit V V V W C C mA
Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Truth table
CE1 H X L L L CE2 X L H H H WE X X H H L OE X X H L X Data High Z High Z High Z DOUT DIN Mode Standby (ISB, ISB1) Standby (ISB, ISB1) Output disable (ICC) Read (ICC) Write (ICC)
Key: X = Don't Care, L = Low, H = High
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Alliance Semiconductor
P. 2 of 9
AS7C1024A AS7C31024A
(R)
Recommended operating conditions
Parameter Supply voltage Device AS7C1024A AS7C31024A ASAS7C1024A AS7C31024A commercial industrial Symbol VCC VCC VIH VIH VIL1 TA TA Min 4.5 3.0 2.2 2.0 -0.5 0 -40 Nominal 5.0 3.3 - - - - - Max 5.5 3.6 VCC + 0.5 VCC + 0.5 0.8 70 85 Unit V V V V V C C
Input voltage
Ambient operating temperature
1 VILmin. = -3.0V for pulse width less than tRC/2.
DC operating characteristics (over the operating range)
-10 Parameter Input leakage current Output leakage current Operating power supply current Sym |ILI| |ILO| ICC Test conditions VCC = Max, VIN = GND to VCC Device Both
Min Max
-12
Min Max
-15
Min Max
-20
Min Max
Unit
A A
-
1 1 155 145 30 30 10 5 0.4 -
- - - - - - - - - 2.4
1 1 150 140 25 25 10 5 0.4 -
- - - - - - - - - 2.4
1 1 145 135 20 20 10 5 0.4 -
- - - - - - - - - 2.4
1 1 140 130 20 20 10 5 0.4 -
ISB Standby power supply current ISB1 Output voltage VOL VOH
VCC = Max, CE1 = VIH or Both - CE2 = VIL, VOUT = GND to VCC VCC = Max, CE1 = VIL, AS7C1024A - CE2 = VIH, f = fMax, IOUT = 0 AS7C31024A - mA VCC = Max, CE1 VIH and/or AS7C1024A - CE2 VIL, VIN = VIH or VIL, AS7C31024A - f = fMax, IOUT = 0mA VCC = Max, CE1 VCC-0.2V AS7C1024A - VIN GND + 0.2V or AS7C31024A - VIN VCC -0.2V, f = 0 IOL = 8 mA, VCC = Min - Both IOH = -4 mA, VCC = Min 2.4
mA
mA
mA V V
Capacitance (f = 1 MHz, Ta = 25 C, VCC = NOMINAL)2
Parameter Input capacitance I/O capacitance Symbol CIN CI/O Signals A, CE1, CE2, WE, OE I/O Test conditions VIN = 0V VIN = VOUT = 0V Max 5 7 Unit pF pF
9/26/02; 0.9.9
Alliance Semiconductor
P. 3 of 9
AS7C1024A AS7C31024A
(R)
Read cycle (over the operating range)
Parameter Read cycle time Address access time Chip enable (CE1) access time Chip enable (CE2) access time Output enable (OE) access time Output hold from address change CE1 Low to output in low Z CE2 High to output in low Z CE1 Low to output in high Z CE2 Low to output in high Z OE Low to output in low Z OE High to output in high Z Power up time Power down time Symbol tRC tAA tACE1 tACE2 tOE tOH tCLZ1 tCLZ2 tCHZ1 tCHZ2 tOLZ tOHZ tPU tPD -10 Min Max 10 - - 10 - 10 - 10 - 5 2 - 0 - 0 - - 3 - 3 0 - - 3 0 - - 10 -12 Min Max 12 - - 12 - 12 - 12 - 6 3 - 0 - 0 - - 3 - 3 0 - - 3 0 - - 12 -15 Min Max 15 - - 15 - 15 - 15 - 7 3 - 0 - 0 - - 4 - 4 0 - - 4 0 - - 15 -20 Min Max 20 - - 20 - 20 - 20 - 8 3 - 0 - 0 - - 5 - 5 0 - - 5 0 - - 20 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns Notes 3 3, 12 3, 12 5 4, 5, 12 4, 5, 12 4, 5, 12 4, 5, 12 4, 5 4, 5 4, 5, 12 4, 5, 12
Key to switching waveforms
Rising input Falling input Undefined / don't care
Read waveform 1 (address controlled)
tRC Address DOUT tAA Data valid tOH
Read waveform 2 (CE1, CE2, and OE controlled)
CE1 CE2 OE DOUT Current supply tACE1, tACE2 tCLZ1, tCLZ2 tPU Data valid tPD 50% 50% ICC ISB tOE tOLZ tOHZ tCHZ1, tCHZ2 tRC1
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Alliance Semiconductor
P. 4 of 9
AS7C1024A AS7C31024A
(R)
Write cycle (over the operating range)
Parameter Write cycle time Chip enable (CE1) to write end Chip enable (CE2) to write end Address setup to write end Address setup time Write pulse width Write recovery time Address hold from end of write Data valid to write end Data hold time Write enable to output in high Z Output active from write end Symbol tWC tCW1 tCW2 tAW tAS tWP tWR tAH tDW tDH tWZ tOW Min 10 8 8 8 0 7 0 0 5 0 - 1 -10 Max - - - - - - - - - - 6 - -12 Min Max 12 - 10 - 10 - 9 - 0 - 8 - 0 - 0 6 0 - 1 - - - 6 - -15 Min Max 15 - 12 - 12 - 10 - 0 - 9 - 0 - 0 8 0 - 1 - - - 6 - -20 Min Max 20 - 12 - 12 - 12 - 0 - 12 - 0 - 0 10 0 - 2 - - - 8 - Unit ns ns ns ns ns ns ns ns ns ns ns ns Notes 12 12 12
4, 5 4, 5 4, 5
Write waveform 1 (WE controlled)
tWC tAW Address tWP WE tAS DIN tWZ DOUT tDW Data valid tOW tDH tWR tAH
Write waveform 2 (CE1 and CE2 controlled)
tAW Address tAS CE1 CE2 tWP WE tWZ DIN DOUT tDW Data valid tDH tCW1, tCW2 tWC tAH tWR
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Alliance Semiconductor
P. 5 of 9
AS7C1024A AS7C31024A
(R)
AC test conditions
- - - - Output load: see Figure B or Figure C. Input pulse level: GND to 3.0V. See Figure A. Input rise and fall times: 2 ns. See Figure A. Input and output timing reference levels: 1.5V.
Thevenin equivalent: 168 DOUT +1.728V (5V and 3.3V) +5V 480 +3.0V GND 90% 10% 2 ns 90% 10% DOUT 255 C(14) DOUT 255 +3.3V 320 C(14)
Figure A: Input pulse
GND Figure B: 5V Output load
GND Figure C: 3.3V Output load
Notes
1 2 3 4 5 6 7 8 9 10 11 12 13 14 During VCC power-up, a pull-up resistor to VCC on CE1 is required to meet ISB specification. This parameter is sampled and not 100% tested. For test conditions, see AC Test Conditions, Figures A, B, and C. tCLZ and tCHZ are specified with CL = 5pF, as in Figure C. Transition is measured 500mV from steady-state voltage. This parameter is guaranteed, but not 100% tested. WE is High for read cycle. CE1 and OE are Low and CE2 is High for read cycle. Address valid prior to or coincident with CE1 transition Low. All read cycle timings are referenced from the last valid address to the first transitioning address. CE1 or WE must be High or CE2 Low during address transitions. Either CE1 or WE asserting high terminates a write cycle. All write cycle timings are referenced from the last valid address to the first transitioning address. CE1 and CE2 have identical timing. C=30pF, except all high Z and low Z parameters, C=5pF. 2V data retention applies to commercial temperature operating range only.
9/26/02; 0.9.9
Alliance Semiconductor
P. 6 of 9
AS7C1024A AS7C31024A
(R)
Typical DC and AC Characteristcs
Normalized supply current ICC, ISB vs. supply voltage VCC Normalized supply current ICC, ISB vs. ambient temperature Ta Normalized ISB1 (log scale) 625 25 5 1 0.2 0.04 -55 -10 35 80 125 Ambient temperature (C) Normalized supply current ISB1 vs. ambient temperature Ta
1.4 1.2 Normalized ICC, ISB 1.0 0.8 0.6 0.4 0.2
1.4 1.2 Normalized ICC, ISB
ICC
1.0 0.8 0.6 0.4 0.2
ICC
VCC = VCC(NOMINAL)
ISB
ISB
0.0 MIN
NOMINAL Supply voltage (V)
MAX
0.0 -55
-10 35 80 125 Ambient temperature (C)
1.5 1.4 Normalized access time 1.3 1.2 1.1 1.0 0.9 0.8 MIN
Normalized access time tAA vs. supply voltage VCC
1.5 1.4 Normalized access time
Normalized access time tAA vs. ambient temperature Ta
1.4 1.2
Normalized supply current ICC vs. cycle frequency 1/tRC, 1/tWC
1.2 1.1 1.0 0.9
VCC = VCC(NOMINAL)
Normalized ICC
1.3
1.0 0.8 0.6 0.4 0.2 0.0
Ta = 25 C
VCC = VCC(NOMINAL) Ta = 25 C
NOMINAL Supply voltage (V)
MAX
0.8 -55
-10 35 80 125 Ambient temperature (C)
0
25 50 75 Cycle frequency (MHz)
100
140 Output source current (mA) 120 100 80 60 40 20 0 0
Output source current IOH vs. output voltage VOH Output sink current (mA)
140 120
Output sink current IOL vs. output voltage VOL
Typical access time change tAA vs. output capacitive loading 35 30 Change in tAA (ns)
100 80 60 40 20 0 0
VCC = VCC(NOMINAL) Ta = 25 C
25 20 15 10 5 0
VCC = VCC(NOMINAL)
VCC = VCC(NOMINAL) Ta = 25 C
VCC Output voltage (V)
VCC Output voltage (V)
0
250 500 750 Capacitance (pF)
1000
9/26/02; 0.9.9
Alliance Semiconductor
P. 7 of 9
AS7C1024A AS7C31024A
(R)
Package dimensions
32-pin SOJ 300 mil Min Max 0.145 0.025 0.086 0.105 0.026 0.032 0.014 0.020 0.006 0.013 0.820 0.830 0.250 0.275 0.292 0.305 0.330 0.340 0.050 BSC 32-pin SOJ 400 mil Min Max 0.145 0.025 0.086 0.115 0.026 0.032 0.015 0.020 0.007 0.013 0.820 0.830 0.360 0.380 0.395 0.405 0.435 0.445 0.050 BSC
D e E1 E2
Pin 1 c A2 E A1
B A b Seating Plane
A A1 A2 B b c D E E1 E2 e
b
e c D Hd L A2 A A1
pin 1
pin 32
A A1 A2 b c D e E Hd L
32-pin TSOP 8x20 mm Min Max - 1.20 0.05 0.15 0.95 1.05 0.17 0.27 0.10 0.21 18.20 18.60 0.50 nominal 7.80 8.20 19.80 20.20 0.50 0 0.70 5
E
pin 16
pin 17
9/26/02; 0.9.9
Alliance Semiconductor
P. 8 of 9
ASAS7C1024A ASAS7C31024A
(R)
Ordering codes
Package \ Access time
Plastic SOJ, 300 mil
Plastic SOJ, 400 mil
TSOP1 8x20 mm
sTSOP1 8 x 13.4mm
Volt/Temp 5V commercial 5V industrial 3.3V commercial 3.3V industrial 5V commercial 5V industrial 3.3V commercial 3.3V industrial 5V commercial 5V industrial 3.3V commercial 3.3V industrial 5V commercial 5V industrial 3.3V commercial 3.3V industrial
10 ns AS7C1024A-10TJC AS7C1024A-10TJI AS7C31024A-10TJC AS7C31024A-10TJI AS7C1024A-10JC AS7C1024A-10JI AS7C31024A-10JC AS7C31024A-10JI AS7C1024A-10TC AS7C1024A-10TI AS7C31024A-10TC AS7C31024A-10TI AS7C1024A-10STC AS7C1024A-10STI AS7C31024A-10STI
12 ns AS7C1024A-12TJC AS7C1024A-12TJI AS7C31024A-12TJC AS7C31024A-12TJI AS7C1024A-12JC AS7C1024A-12JI AS7C31024A-12JC AS7C31024A-12JI AS7C1024A-12TC AS7C1024A-12TI AS7C31024A-12TC AS7C31024A-12TI AS7C1024A-12STC AS7C1024A-12STI AS7C31024A-12STI
15 ns AS7C1024A-15TJC AS7C1024A-15TJI AS7C31024A-15TJC AS7C31024A-15TJI AS7C1024A-15JC AS7C1024A-15JI AS7C31024A-15JC AS7C31024A-15JI AS7C1024A-15TC AS7C1024A-15TI AS7C31024A-15TC AS7C31024A-15TI AS7C1024A-15STC AS7C1024A-15STI AS7C31024A-15STC AS7C31024A-15STI
20 ns AS7C1024A-20TJC AS7C1024A-20TJI AS7C31024A-20TJC AS7C31024A-20TJI AS7C1024A-20JC AS7C1024A-20JI AS7C31024A-20JC AS7C31024A-20JI AS7C1024A-20TC AS7C1024A-20TI AS7C31024A-20TC AS7C31024A-20TI AS7C1024A-20STC AS7C1024A-20STI AS7C31024A-20STC AS7C31024A-20STI
AS7C31024A-10STC AS7C31024A-12STC
Part numbering system
AS7C SRAM prefix X Blank=5V CMOS 3=3.3V CMOS 1024A Device number -XX Access time X Package:T=TSOP1 8x20 mm ST=sTSOP1 8 x 13.4 mm J=SOJ 400 mil TJ=SOJ 300 mil X Temperature range C = Commercial, 0C to 70C I = Industrial, -40C to 85C
9/26/02; 0.9.9
Alliance Semiconductor
P. 9 of 9
(c) Copyright A lliance Sem iconductor Corporation. A ll rights reserved. Our three-point logo, our nam e and Intelliwatt are tradem arks or registered tradem arks of A lliance. A ll other brand and product nam es m ay be the tradem arks of their respective com panies. A lliance reserves the right to m ake changes to this docum ent and its products at any tim e w ithout notice. A lliance assum es no responsibility for any errors that m ay appear in this docum ent. The data contained herein represents A lliance's best data and/or estim ates at the tim e of issuance. Alliance reserves the right to change or correct this data at any tim e, w ithout notice. If the product described herein is under developm ent, significant changes to these specifications are possible. The inform ation in this product data sheet is intended to be general descriptive inform ation for potential custom ers and users, and is not intended to operate as, or provide, any guarantee or warrantee to any user or custom er. Alliance does not assum e any responsibility or liability arising out of the application or use of any product described herein, and disclaim s any express or im plied w arranties related to the sale and/or use of A lliance products including liability or warranties related to fitness for a particular purpose, m erchantability, or infringem ent of any intellectual property rights, except as express agreed to in A lliance's T erm s and Conditions of Sale (w hich are available from A lliance). A ll sales of Alliance products are m ade exclusively according to A lliance's Term s and Conditions of Sale. T he purchase of products from Alliance does not convey a license under any patent rights, copyrights, m ask w orks rights, tradem arks, or any other intellectual property rights of A lliance or third parties. A lliance does not authorize its products for use as critical com ponents in life-supporting system s w here a m alfunction or failure m ay reasonably be expected to result in significant injury to the user, and the inclusion of A lliance products in such life-supporting system s im plies that the m anufacturer assum es all risk of such use and agrees to indem nify A lliance against all claim s arising from such use.


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